FGH30T65UPDT-F155 ON Semiconductor
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 8.74 EUR |
21+ | 7.57 EUR |
25+ | 6.88 EUR |
50+ | 6.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGH30T65UPDT-F155 ON Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 33 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/139ns, Switching Energy: 760µJ (on), 400µJ (off), Test Condition: 400V, 30A, 8Ohm, 15V, Gate Charge: 155 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 250 W.
Weitere Produktangebote FGH30T65UPDT-F155 nach Preis ab 6.27 EUR bis 8.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FGH30T65UPDT-F155 | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 60A 250W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
FGH30T65UPDT-F155 | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||
FGH30T65UPDT_F155 | Hersteller : Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 33 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/139ns Switching Energy: 760µJ (on), 400µJ (off) Test Condition: 400V, 30A, 8Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
||||||||||||
FGH30T65UPDT-F155 | Hersteller : onsemi |
Description: IGBT 650V 60A 250W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/139ns Switching Energy: 760µJ (on), 400µJ (off) Test Condition: 400V, 30A, 8Ohm, 15V Gate Charge: 155 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
||||||||||||
FGH30T65UPDT-F155 | Hersteller : onsemi / Fairchild | IGBT Transistors FS1TIGBT TO247 30A 650V |
Produkt ist nicht verfügbar |