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FGH40N60UFDTU

FGH40N60UFDTU onsemi / Fairchild


FGH40N60UFD_D-2313363.pdf Hersteller: onsemi / Fairchild
IGBT Transistors 600V 40A Field Stop
auf Bestellung 58 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.54 EUR
30+ 9.15 EUR
120+ 7.83 EUR
510+ 6.81 EUR
Mindestbestellmenge: 5
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Technische Details FGH40N60UFDTU onsemi / Fairchild

Description: IGBT FIELD STOP 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 45 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 24ns/112ns, Switching Energy: 1.19mJ (on), 460µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 290 W.

Weitere Produktangebote FGH40N60UFDTU

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FGH40N60UFDTU FGH40N60UFDTU
Produktcode: 61781
Hersteller : FAIR fgh40n60ufd-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 80
Ic 100: 40
Pd 25: 290
td(on)/td(off) 100-150 Grad: 24/112
Produkt ist nicht verfügbar
FGH40N60UFDTU FGH40N60UFDTU Hersteller : ON Semiconductor fgh40n60ufd-d.pdf Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FGH40N60UFDTU FGH40N60UFDTU Hersteller : ON Semiconductor fgh40n60ufd-d.pdf Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FGH40N60UFDTU FGH40N60UFDTU Hersteller : ON Semiconductor fgh40n60ufd-d.pdf Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FGH40N60UFDTU FGH40N60UFDTU Hersteller : ONSEMI FGH40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Mounting: THT
Power dissipation: 116W
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Type of transistor: IGBT
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FGH40N60UFDTU FGH40N60UFDTU Hersteller : onsemi fgh40n60ufd-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Produkt ist nicht verfügbar
FGH40N60UFDTU FGH40N60UFDTU Hersteller : ONSEMI FGH40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Mounting: THT
Power dissipation: 116W
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Type of transistor: IGBT
Gate charge: 0.12µC
Produkt ist nicht verfügbar