FGH40N60UFDTU onsemi / Fairchild
auf Bestellung 58 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.54 EUR |
30+ | 9.15 EUR |
120+ | 7.83 EUR |
510+ | 6.81 EUR |
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Technische Details FGH40N60UFDTU onsemi / Fairchild
Description: IGBT FIELD STOP 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 45 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 24ns/112ns, Switching Energy: 1.19mJ (on), 460µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 290 W.
Weitere Produktangebote FGH40N60UFDTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FGH40N60UFDTU Produktcode: 61781 |
Hersteller : FAIR |
Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 600 Vce: 1,8 Ic 25: 80 Ic 100: 40 Pd 25: 290 td(on)/td(off) 100-150 Grad: 24/112 |
Produkt ist nicht verfügbar
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FGH40N60UFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH40N60UFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH40N60UFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH40N60UFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Mounting: THT Power dissipation: 116W Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Type of transistor: IGBT Gate charge: 0.12µC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH40N60UFDTU | Hersteller : onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 24ns/112ns Switching Energy: 1.19mJ (on), 460µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
Produkt ist nicht verfügbar |
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FGH40N60UFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Mounting: THT Power dissipation: 116W Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Type of transistor: IGBT Gate charge: 0.12µC |
Produkt ist nicht verfügbar |