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FGH40T100SMD

FGH40T100SMD ON Semiconductor


fgh40t100smd-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1000V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details FGH40T100SMD ON Semiconductor

Description: IGBT 1000V 80A 333W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 78 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 29ns/285ns, Switching Energy: 2.35mJ (on), 1.15mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 265 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 333 W.

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FGH40T100SMD FGH40T100SMD Hersteller : onsemi fgh40t100smd-d.pdf Description: IGBT 1000V 80A 333W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/285ns
Switching Energy: 2.35mJ (on), 1.15mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 265 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 333 W
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FGH40T100SMD FGH40T100SMD Hersteller : onsemi / Fairchild FGH40T100SMD_D-2313148.pdf IGBT Transistors 1000V 40A Field Stop Trench IGBT
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