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FGH40T65SH-F155

FGH40T65SH-F155 onsemi / Fairchild


FGH40T65SH_D-2313211.pdf Hersteller: onsemi / Fairchild
IGBT Transistors 650V FS Gen3 Trench IGBT
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Technische Details FGH40T65SH-F155 onsemi / Fairchild

Description: IGBT 650V 80A 268W TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19.2ns/65.6ns, Switching Energy: 1.01mJ (on), 297µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 72.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 268 W.

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FGH40T65SH-F155 FGH40T65SH-F155 Hersteller : onsemi fgh40t65sh-d.pdf Description: IGBT 650V 80A 268W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
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