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FGH75T65UPD-F155

FGH75T65UPD-F155 ON Semiconductor


fgh75t65upd-d.pdf Hersteller: ON Semiconductor
Field Stop Trench IGBT Chip Transistor
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Technische Details FGH75T65UPD-F155 ON Semiconductor

Description: 650V,75A FIELD STOP TRENCH IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/216ns, Switching Energy: 3.68mJ (on), 1.6mJ (off), Test Condition: 400V, 75A, 3Ohm, 15V, Gate Charge: 68 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 375 W.

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FGH75T65UPD-F155 Hersteller : onsemi FGH75T65UPD.pdf Description: 650V,75A FIELD STOP TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/216ns
Switching Energy: 3.68mJ (on), 1.6mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
Produkt ist nicht verfügbar
FGH75T65UPD-F155 Hersteller : onsemi / Fairchild FGH75T65UPD_D-2313495.pdf IGBT Transistors 650V,75A Field Stop Trench IGBT
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