Technische Details FGP15N60UNDF ON Semiconductor
Description: IGBT NPT 600V 30A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 82.4 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A, Supplier Device Package: TO-220-3, IGBT Type: NPT, Td (on/off) @ 25°C: 9.3ns/54.8ns, Switching Energy: 370µJ (on), 67µJ (off), Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 43 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 178 W.
Weitere Produktangebote FGP15N60UNDF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FGP15N60UNDF | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FGP15N60UNDF | Hersteller : onsemi |
Description: IGBT NPT 600V 30A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 82.4 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: NPT Td (on/off) @ 25°C: 9.3ns/54.8ns Switching Energy: 370µJ (on), 67µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 43 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 178 W |
Produkt ist nicht verfügbar |
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FGP15N60UNDF | Hersteller : onsemi / Fairchild |
IGBTs 600V 15A NPT IGBT |
Produkt ist nicht verfügbar |