FGY40T120SMD onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 882 W
auf Bestellung 401 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 27.48 EUR |
| 30+ | 22.26 EUR |
| 120+ | 20.95 EUR |
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Technische Details FGY40T120SMD onsemi
Description: IGBT TRENCH FS 1200V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/475ns, Switching Energy: 2.7mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 882 W.
Weitere Produktangebote FGY40T120SMD nach Preis ab 19.11 EUR bis 27.69 EUR
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FGY40T120SMD | Hersteller : onsemi / Fairchild |
IGBT Transistors 1200 V, 40 A Field Stop Trench IGBT |
auf Bestellung 209 Stücke: Lieferzeit 14-28 Tag (e) |
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FGY40T120SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 Tube |
Produkt ist nicht verfügbar |
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| FGY40T120SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 441W Case: TO247H03 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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| FGY40T120SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 441W Case: TO247H03 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |