Produkte > ONSEMI > FJAF6810ATU

FJAF6810ATU ONSEMI


FAIRS28491-1.pdf?t.download=true&u=5oefqw Hersteller: ONSEMI
Description: ONSEMI - FJAF6810ATU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 720 Stücke:

Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details FJAF6810ATU ONSEMI

Description: TRANS NPN 750V 10A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V, Supplier Device Package: TO-3PF, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 750 V, Power - Max: 60 W.

Weitere Produktangebote FJAF6810ATU

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FJAF6810ATU FJAF6810ATU Hersteller : ON Semiconductor fjaf6810.pdf Trans GP BJT NPN 750V 10A 60000mW 3-Pin(3+Tab) TO-3PF Rail
Produkt ist nicht verfügbar
FJAF6810ATU FJAF6810ATU Hersteller : onsemi Description: TRANS NPN 750V 10A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 60 W
Produkt ist nicht verfügbar
FJAF6810ATU FJAF6810ATU Hersteller : onsemi / Fairchild fairchild_semiconductor_fjaf6810-1191243.pdf Bipolar Transistors - BJT NPN Triple Diffused Planar
Produkt ist nicht verfügbar