FJD5553TM onsemi
Hersteller: onsemiDescription: TRANS NPN 400V 3A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 3V
Supplier Device Package: TO-252AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.25 W
auf Bestellung 2483 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 2.08 EUR |
| 15+ | 1.8 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.89 EUR |
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Technische Details FJD5553TM onsemi
Description: TRANS NPN 400V 3A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 3V, Supplier Device Package: TO-252AA, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1.25 W.
Weitere Produktangebote FJD5553TM nach Preis ab 0.77 EUR bis 2.1 EUR
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FJD5553TM Produktcode: 187870 |
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| FJD5553TM | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 3A; 1.25W; DPAK Kind of package: reel; tape Collector-emitter voltage: 400V Power dissipation: 1.25W Polarisation: bipolar Type of transistor: NPN Current gain: 10...60 Case: DPAK Collector current: 3A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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FJD5553TM | Hersteller : onsemi |
Description: TRANS NPN 400V 3A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 3V Supplier Device Package: TO-252AA Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
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| FJD5553TM | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 3A; 1.25W; DPAK Kind of package: reel; tape Collector-emitter voltage: 400V Power dissipation: 1.25W Polarisation: bipolar Type of transistor: NPN Current gain: 10...60 Case: DPAK Collector current: 3A Mounting: SMD |
Produkt ist nicht verfügbar |