FJN4305RTA

FJN4305RTA

Hersteller: ON Semiconductor
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin TO-92 Fan-Fold
FJN4305R.pdf FAIR-S-A0001358574-1.pdf?t.download=true&u=5oefqw
verfügbar/auf Bestellung
auf Bestellung 17997 Stücke
Lieferzeit 14-21 Tag (e)

363+ 0.44 EUR
549+ 0.28 EUR
1316+ 0.11 EUR
1916+ 0.074 EUR
2445+ 0.055 EUR
10000+ 0.043 EUR

Technische Details FJN4305RTA

Description: TRANS PREBIAS PNP 300MW TO92-3, Supplier Device Package: TO-92-3, Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type: Through Hole, Power - Max: 300mW, Frequency - Transition: 200MHz, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Resistor - Base (R1): 4.7kOhms, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Transistor Type: PNP - Pre-Biased.

Preis FJN4305RTA ab 0.043 EUR bis 0.44 EUR

FJN4305RTA
Hersteller: FAIRCHIL
03+ BGA
FJN4305R.pdf FAIR-S-A0001358574-1.pdf?t.download=true&u=5oefqw
50 Stücke
FJN4305RTA
FJN4305RTA
Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
FJN4305R-1120003.pdf
auf Bestellung 15752 Stücke
Lieferzeit 14-28 Tag (e)
FJN4305RTA
FJN4305RTA
Hersteller: Fairchild Semiconductor
Description: TRANS PREBIAS PNP 300MW TO92-3
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type: Through Hole
Power - Max: 300mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Resistor - Base (R1): 4.7kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
FJN4305R.pdf
auf Bestellung 737 Stücke
Lieferzeit 21-28 Tag (e)
FJN4305RTA
FJN4305RTA
Hersteller: Fairchild Semiconductor
Description: TRANS PREBIAS PNP 300MW TO92-3
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type: Through Hole
Power - Max: 300mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Resistor - Base (R1): 4.7kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
FJN4305R.pdf
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