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FJP5200RTU

FJP5200RTU ON Semiconductor


fjp5200jp-d.pdf Hersteller: ON Semiconductor
Trans GP BJT NPN 250V 17A 100000mW 3-Pin(3+Tab) TO-220 Tube
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Technische Details FJP5200RTU ON Semiconductor

Description: TRANS NPN 250V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -50°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 17 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 80 W.

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FJP5200RTU FJP5200RTU Hersteller : onsemi FJP5200.pdf Description: TRANS NPN 250V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 80 W
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FJP5200RTU FJP5200RTU Hersteller : onsemi / Fairchild FJP5200_D-1809282.pdf Bipolar Transistors - BJT NPN 230V 15A 80W
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