FJV4113RMTF

FJV4113RMTF

Hersteller: FAIRCHILD
0914+ROHS
FAIRS45939-1.pdf?t.download=true&u=5oefqw FJV4113R.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9000 Stücke
Lieferzeit 7-21 Tag (e)

Technische Details FJV4113RMTF

Description: TRANS PREBIAS PNP 200MW SOT23-3, Supplier Device Package: SOT-23-3 (TO-236), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Power - Max: 200mW, Frequency - Transition: 200MHz, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Transistor Type: PNP - Pre-Biased.

Preis FJV4113RMTF ab 0 EUR bis 0 EUR

FJV4113RMTF
Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - Pre-Biased 50/100mA/2.2K 47K
FJV4113R-1119909.pdf
auf Bestellung 17810 Stücke
Lieferzeit 14-28 Tag (e)
FJV4113RMTF
FJV4113RMTF
Hersteller: Fairchild Semiconductor
Description: TRANS PREBIAS PNP 200MW SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
FJV4113R.pdf
auf Bestellung 8553 Stücke
Lieferzeit 21-28 Tag (e)
FJV4113RMTF
FJV4113RMTF
Hersteller: Fairchild Semiconductor
Description: TRANS PREBIAS PNP 200MW SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
FJV4113R.pdf
auf Bestellung 81000 Stücke
Lieferzeit 21-28 Tag (e)
FJV4113RMTF
FJV4113RMTF
Hersteller: Fairchild Semiconductor
Description: TRANS PREBIAS PNP 200MW SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
FJV4113R.pdf
auf Bestellung 855381000 Stücke
Lieferzeit 21-28 Tag (e)