FJV4113RMTF
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9000 Stücke
Lieferzeit 7-21 Tag (e)
auf Bestellung 9000 Stücke
Lieferzeit 7-21 Tag (e)
Technische Details FJV4113RMTF
Description: TRANS PREBIAS PNP 200MW SOT23-3, Supplier Device Package: SOT-23-3 (TO-236), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Power - Max: 200mW, Frequency - Transition: 200MHz, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Transistor Type: PNP - Pre-Biased.
Preis FJV4113RMTF ab 0 EUR bis 0 EUR
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FJV4113RMTF Hersteller: ON Semiconductor / Fairchild Bipolar Transistors - Pre-Biased 50/100mA/2.2K 47K 
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auf Bestellung 17810 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Fairchild Semiconductor Description: TRANS PREBIAS PNP 200MW SOT23-3 Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Power - Max: 200mW Frequency - Transition: 200MHz Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: PNP - Pre-Biased
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auf Bestellung 8553 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Fairchild Semiconductor Description: TRANS PREBIAS PNP 200MW SOT23-3 Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Power - Max: 200mW Frequency - Transition: 200MHz Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: PNP - Pre-Biased
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auf Bestellung 81000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Fairchild Semiconductor Description: TRANS PREBIAS PNP 200MW SOT23-3 Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Power - Max: 200mW Frequency - Transition: 200MHz Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: PNP - Pre-Biased
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auf Bestellung 855381000 Stücke Lieferzeit 21-28 Tag (e) |
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