Technische Details FMD21-05QC IXYS
Description: MOSFET N-CH 500V 21A I4PAC, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS i4-PAC™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V.
Weitere Produktangebote FMD21-05QC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FMD2105QC | Hersteller : MIT | MODULE |
auf Bestellung 170 Stücke: Lieferzeit 21-28 Tag (e) |
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| FMD21-05QC | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 21A I4PACPackaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V |
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