FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Technology: EasyPIM™ 1B
Collector current: 6A
Power dissipation: 94W
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Technology: EasyPIM™ 1B
Collector current: 6A
Power dissipation: 94W
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 36.38 EUR |
3+ | 34.39 EUR |
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Technische Details FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES
Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A, Technology: EasyPIM™ 1B, Collector current: 6A, Power dissipation: 94W, Case: AG-EASY1B-1, Gate-emitter voltage: ±20V, Pulsed collector current: 12A, Semiconductor structure: diode/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FP06R12W1T4B3BOMA1 nach Preis ab 34.39 EUR bis 92.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FP06R12W1T4B3BOMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Technology: EasyPIM™ 1B Collector current: 6A Power dissipation: 94W Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Pulsed collector current: 12A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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FP06R12W1T4B3BOMA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 1200V 0 94W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 94 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) |
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FP06R12W1T4B3BOMA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray |
Produkt ist nicht verfügbar |
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FP06R12W1T4B3BOMA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 12A 94000mW 20-Pin EASY1B-1 Tray |
Produkt ist nicht verfügbar |