auf Bestellung 88 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 104.99 EUR |
| 10+ | 93.55 EUR |
| 24+ | 87.96 EUR |
| 48+ | 85.05 EUR |
| 120+ | 82.11 EUR |
| 264+ | 79.17 EUR |
| 504+ | 75.5 EUR |
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Technische Details FP15R12W1T4_B3 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A, Case: AG-EASY1B-1, Semiconductor structure: diode/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: EasyPIM™ 1B, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 15A, Pulsed collector current: 30A, Gate-emitter voltage: ±20V, Power dissipation: 130W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FP15R12W1T4_B3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FP15R12W1T4-B3 | Hersteller : EUPEC | 15A/1200V/PIM |
auf Bestellung 96 Stücke: Lieferzeit 21-28 Tag (e) |
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FP15R12W1T4_B3 | Hersteller : INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Case: AG-EASY1B-1 Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Pulsed collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 130W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FP15R12W1T4_B3 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Case: AG-EASY1B-1 Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Pulsed collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 130W |
Produkt ist nicht verfügbar |