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FP50R12KT4B11BOSA1

FP50R12KT4B11BOSA1 Infineon Technologies


Infineon-FP50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a73efc91e28 Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+208.47 EUR
Mindestbestellmenge: 4
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Technische Details FP50R12KT4B11BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 50A 280W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 280 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V.

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FP50R12KT4B11BOSA1 FP50R12KT4B11BOSA1 Hersteller : Infineon Technologies Infineon-FP50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a73efc91e28 Description: IGBT MOD 1200V 50A 280W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
FP50R12KT4B11BOSA1 Hersteller : INFINEON TECHNOLOGIES FP50R12KT4B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Case: AG-ECONO2-4
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Pulsed collector current: 100A
Produkt ist nicht verfügbar