FQA170N06 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 170A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
auf Bestellung 250 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 10.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQA170N06 onsemi
Description: MOSFET N-CH 60V 170A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V.
Weitere Produktangebote FQA170N06 nach Preis ab 15.34 EUR bis 20.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQA170N06 | Hersteller : onsemi / Fairchild |
MOSFET 60V N-Channel QFET |
auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||
|
|
FQA170N06 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 170A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||
| FQA170N06 |
|
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
 |
FQA170N06 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
|||||||||||
 |
FQA170N06 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 680A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 680A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 5.6mΩ Mounting: THT Gate charge: 290nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |