auf Bestellung 1251 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.55 EUR |
| 10+ | 13.99 EUR |
| 25+ | 13.03 EUR |
| 100+ | 11.31 EUR |
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Technische Details FQA65N20 onsemi / Fairchild
Description: MOSFET N-CH 200V 65A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote FQA65N20 nach Preis ab 8.63 EUR bis 8.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FQA65N20 | Hersteller : Fairchild |
 N-MOSFET 65A 200V 310W 0.032Ω FQA65N20 TFQA65n20Anzahl je Verpackung: 2 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FQA65N20 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-3P Tube |
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FQA65N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 65A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQA65N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 41A; 310W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 41A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |