FQAF16N50 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.65A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 8060 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 108+ | 6.7 EUR |
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Technische Details FQAF16N50 Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 5.65A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote FQAF16N50 nach Preis ab 4.81 EUR bis 13.94 EUR
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FQAF16N50 | Hersteller : onsemi / Fairchild |
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auf Bestellung 333 Stücke: Lieferzeit 14-28 Tag (e) |
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| FQAF16N50 | Hersteller : Fairchild |
N-MOSFET 500V 11.3A 110W FQAF16N50 Fairchild TFQAF16n50 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FQAF16N50 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 11.3A 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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FQAF16N50 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Technology: QFET® Mounting: THT Power dissipation: 110W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 7.15A On-state resistance: 0.32Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 75nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQAF16N50 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Technology: QFET® Mounting: THT Power dissipation: 110W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 7.15A On-state resistance: 0.32Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 75nC |
Produkt ist nicht verfügbar |