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FQB19N10LTM

FQB19N10LTM Fairchild Semiconductor

FAIRS18320-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 5002 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
503+1.44 EUR
Mindestbestellmenge: 503
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Technische Details FQB19N10LTM Fairchild Semiconductor

Description: MOSFET N-CH 100V 19A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V, Power Dissipation (Max): 3.75W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.

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FQB19N10LTM Hersteller : Fairchild FAIRS18320-1.pdf?t.download=true&u=5oefqw FQB19N10L%2C%20FQI19N10L.pdf
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
FQB19N10LTM FQB19N10LTM Hersteller : onsemi FQB19N10L%2C%20FQI19N10L.pdf Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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