FQB19N20TM onsemi
Hersteller: onsemiDescription: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.9 EUR |
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Technische Details FQB19N20TM onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote FQB19N20TM nach Preis ab 1.2 EUR bis 5.17 EUR
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FQB19N20TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 789 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 789 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20TM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 2290 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB19N20TM | Hersteller : onsemi / Fairchild |
MOSFET 200V N-Ch QFET Logic Level |
auf Bestellung 11946 Stücke: Lieferzeit 14-28 Tag (e) |
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| FQB19N20TM | Hersteller : FCS |
02+ |
auf Bestellung 12774 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB19N20TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB19N20TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB19N20TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB19N20TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB19N20TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.3A Pulsed drain current: 78A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB19N20TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.3A Pulsed drain current: 78A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |