auf Bestellung 3216 Stücke:
Lieferzeit 114-128 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 9.26 EUR |
| 10+ | 8.32 EUR |
| 25+ | 7.88 EUR |
| 100+ | 6.84 EUR |
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Technische Details FQB34N20TM-AM002 onsemi / Fairchild
Description: MOSFET N-CH 200V 31A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V, Power Dissipation (Max): 3.13W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V.
Weitere Produktangebote FQB34N20TM-AM002
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQB34N20TM-AM002 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R |
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FQB34N20TM-AM002 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R |
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FQB34N20TM-AM002 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 31A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
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FQB34N20TM-AM002 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 31A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB34N20TM-AM002 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 124A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |