FQB9N50CTM onsemi / Fairchild
auf Bestellung 182 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.59 EUR |
| 11+ | 5.04 EUR |
| 25+ | 4.73 EUR |
| 100+ | 4.06 EUR |
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Technische Details FQB9N50CTM onsemi / Fairchild
Description: MOSFET N-CH 500V 9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V.
Weitere Produktangebote FQB9N50CTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FQB9N50CTM | Hersteller : FAIRCHILD |
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auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB9N50CTM | Hersteller : ON Semiconductor |
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auf Bestellung 10400 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB9N50CTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB9N50CTM | Hersteller : onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB9N50CTM | Hersteller : onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
Produkt ist nicht verfügbar |