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FQD12N20LTM-F085

FQD12N20LTM-F085 onsemi


fqd12n20l-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.21 EUR
5000+ 1.15 EUR
Mindestbestellmenge: 2500
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Technische Details FQD12N20LTM-F085 onsemi

Description: MOSFET N-CH 200V 9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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FQD12N20LTM-F085 FQD12N20LTM-F085 Hersteller : onsemi / Fairchild fairchild_semiconductor_fqd12n20lt_f085-1191370.pdf MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab
auf Bestellung 13357 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.94 EUR
22+ 2.41 EUR
100+ 1.88 EUR
500+ 1.59 EUR
1000+ 1.29 EUR
2500+ 1.25 EUR
Mindestbestellmenge: 18
FQD12N20LTM-F085 Hersteller : ON Semiconductor fqd12n20l-d.pdf
auf Bestellung 7300 Stücke:
Lieferzeit 21-28 Tag (e)
FQD12N20LTM-F085 FQD12N20LTM-F085 Hersteller : ON Semiconductor fqd12n20ltm_f085.pdf Trans MOSFET N-CH 200V 9A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
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FQD12N20LTM-F085 FQD12N20LTM-F085 Hersteller : ON Semiconductor fqd12n20ltm_f085.pdf Trans MOSFET N-CH 200V 9A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD12N20LTM-F085 FQD12N20LTM-F085 Hersteller : ON Semiconductor fqd12n20ltm_f085.pdf Trans MOSFET N-CH 200V 9A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD12N20LTM-F085 FQD12N20LTM-F085 Hersteller : ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD12N20LTM-F085 FQD12N20LTM-F085 Hersteller : ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar