FQD13N06LTM ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
129+ | 0.56 EUR |
143+ | 0.5 EUR |
169+ | 0.42 EUR |
178+ | 0.4 EUR |
2500+ | 0.39 EUR |
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Produktbewertung abgeben
Technische Details FQD13N06LTM ONSEMI
Description: MOSFET N-CH 60V 11A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote FQD13N06LTM nach Preis ab 0.39 EUR bis 1.72 EUR
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FQD13N06LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 28W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD13N06LTM | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD13N06LTM | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 6275 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD13N06LTM | Hersteller : onsemi / Fairchild | MOSFET 60V N-Channel QFET Logic Level |
auf Bestellung 37367 Stücke: Lieferzeit 14-28 Tag (e) |
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FQD13N06LTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD13N06LTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD13N06LTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |