Technische Details FQD13N10LTF FAIRCHILD
Description: MOSFET N-CH 100V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.
Weitere Produktangebote FQD13N10LTF
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FQD13N10LTF | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD13N10LTF | Hersteller : onsemi |
Description: MOSFET N-CH 100V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD13N10LTF | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Ch QFET Logic Level |
Produkt ist nicht verfügbar |