FQD17N08LTM ON Semiconductor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details FQD17N08LTM ON Semiconductor
Description: MOSFET N-CH 80V 12.9A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V, Power Dissipation (Max): 2.5W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.
Weitere Produktangebote FQD17N08LTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQD17N08LTM | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD17N08LTM | Hersteller : ON Semiconductor / Fairchild |
MOSFET 80V N-Channel QFET Logic Level |
auf Bestellung 1561 Stücke: Lieferzeit 14-28 Tag (e) |
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FQD17N08LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
|
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FQD17N08LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD17N08LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.2A Pulsed drain current: 51.6A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD17N08LTM | Hersteller : onsemi |
Description: MOSFET N-CH 80V 12.9A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD17N08LTM | Hersteller : onsemi |
Description: MOSFET N-CH 80V 12.9A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD17N08LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.2A Pulsed drain current: 51.6A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |