auf Bestellung 44719 Stücke:
Lieferzeit 252-266 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.28 EUR |
| 20+ | 2.68 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.4 EUR |
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Technische Details FQD18N20V2TM onsemi / Fairchild
Description: MOSFET N-CH 200V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.
Weitere Produktangebote FQD18N20V2TM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQD18N20V2TM | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD18N20V2TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 9.75A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 26nC Technology: QFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD18N20V2TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD18N20V2TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD18N20V2TM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD18N20V2TM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD18N20V2TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 9.75A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 26nC Technology: QFET® |
Produkt ist nicht verfügbar |