FQD19N10TM ON Semiconductor
auf Bestellung 12492 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.91 EUR |
| 210+ | 0.73 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD19N10TM ON Semiconductor
Description: MOSFET N-CH 100V 15.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V.
Weitere Produktangebote FQD19N10TM nach Preis ab 0.48 EUR bis 1.05 EUR
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FQD19N10TM | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD19N10TM | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Ch QFET Logic Level |
auf Bestellung 13231 Stücke: Lieferzeit 14-28 Tag (e) |
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| FQD19N10TM | Hersteller : FAIRCHILD |
TO-252 0715+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQD19N10TM | Hersteller : FSC |
09+ DIP |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD19N10TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FQD19N10TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD19N10TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD19N10TM | Hersteller : onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD19N10TM | Hersteller : onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD19N10TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |