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FQD1N80TM

FQD1N80TM onsemi / Fairchild

FQU1N80_D-2314168.pdf Hersteller: onsemi / Fairchild
MOSFET Power MOSFET
auf Bestellung 334 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.39 EUR
27+ 1.98 EUR
100+ 1.54 EUR
500+ 1.3 EUR
1000+ 1.06 EUR
2500+ 1.04 EUR
Mindestbestellmenge: 22
Produktrezensionen
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Technische Details FQD1N80TM onsemi / Fairchild

Description: MOSFET N-CH 800V 1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V.

Weitere Produktangebote FQD1N80TM nach Preis ab 0.98 EUR bis 0.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FQD1N80TM Hersteller : Fairchild fqu1n80-d.pdf Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C; FQD1N80TM TFQD1n80tm
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.98 EUR
Mindestbestellmenge: 50
FQD1N80TM FQD1N80TM Hersteller : ON Semiconductor fqu1n80jp-d.pdf Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD1N80TM Hersteller : ON Semiconductor fqu1n80jp-d.pdf Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD1N80TM FQD1N80TM Hersteller : onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Produkt ist nicht verfügbar
FQD1N80TM FQD1N80TM Hersteller : onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Produkt ist nicht verfügbar