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FQD20N06LETM

FQD20N06LETM Fairchild Semiconductor

FAIRS17751-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 25 V
auf Bestellung 49818 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
888+0.82 EUR
Mindestbestellmenge: 888
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Technische Details FQD20N06LETM Fairchild Semiconductor

Description: MOSFET N-CH 60V 17.2A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 25 V.

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FQD20N06LETM Hersteller : FSC FAIRS17751-1.pdf?t.download=true&u=5oefqw 04+ LP5
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
FQD20N06LETM FQD20N06LETM Hersteller : onsemi FAIRS17751-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 25 V
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FQD20N06LETM FQD20N06LETM Hersteller : ON Semiconductor / Fairchild fairchild semiconductor_fqu20n06l-1191423.pdf MOSFET 60V N-Ch QFET Logic Level
Produkt ist nicht verfügbar