FQD2N100TF Fairchild/ON Semiconductor
Hersteller: Fairchild/ON SemiconductorN-канальний ПТ; Udss, В = 1 000; Id = 1,6 А; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 25; Qg, нКл = 15,5 @ 10 В; Rds = 9 Ом @ 800 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 5 В @ 250 мкА; DPAK-3
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 3.42 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD2N100TF Fairchild/ON Semiconductor
Description: MOSFET N-CH 1000V 1.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.
Weitere Produktangebote FQD2N100TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
FQD2N100TF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
FQD2N100TF | Hersteller : onsemi |
Description: MOSFET N-CH 1000V 1.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
Produkt ist nicht verfügbar |