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FQD4N25TM-WS

FQD4N25TM-WS onsemi


fqd4n25-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 250V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 6411 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
992+0.72 EUR
Mindestbestellmenge: 992
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Technische Details FQD4N25TM-WS onsemi

Description: MOSFET N-CH 250V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.

Weitere Produktangebote FQD4N25TM-WS nach Preis ab 1.08 EUR bis 2.03 EUR

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FQD4N25TM-WS FQD4N25TM-WS Hersteller : onsemi / Fairchild FQD4N25_D-2313959.pdf MOSFET 250V N-Channel QFET
auf Bestellung 821 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
30+ 1.79 EUR
100+ 1.37 EUR
500+ 1.08 EUR
Mindestbestellmenge: 26
FQD4N25TM-WS FQD4N25TM-WS Hersteller : ONSEMI fqd4n25-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 250V
Drain current: 1.9A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD4N25TM-WS FQD4N25TM-WS Hersteller : onsemi fqd4n25-d.pdf Description: MOSFET N-CH 250V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
FQD4N25TM-WS FQD4N25TM-WS Hersteller : ONSEMI fqd4n25-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 250V
Drain current: 1.9A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar