Technische Details FQD5N50CTM-WS FAIRCHILD
Description: MOSFET N-CHANNEL 500V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V.
Weitere Produktangebote FQD5N50CTM-WS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQD5N50CTMWS | Hersteller : Fairchild |
auf Bestellung 415000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD5N50CTM-WS | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 500V 4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD5N50CTM-WS | Hersteller : onsemi |
Description: MOSFET N-CHANNEL 500V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD5N50CTM-WS | Hersteller : onsemi / Fairchild |
MOSFET Power MOSFET, N-Channel, QFET , 500 V, 4 A, 1.4 O, DPAK |
Produkt ist nicht verfügbar |