FQD6N25TM ON Semiconductor
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details FQD6N25TM ON Semiconductor
Description: MOSFET N-CH 250V 4.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote FQD6N25TM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQD6N25TM | Hersteller : onsemi / Fairchild |
 MOSFET 250V N-Channel QFET |
auf Bestellung 1424 Stücke: Lieferzeit 14-28 Tag (e) |
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FQD6N25TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FQD6N25TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FQD6N25TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.6A Pulsed drain current: 17.6A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD6N25TM | Hersteller : onsemi |
Description: MOSFET N-CH 250V 4.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQD6N25TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.6A Pulsed drain current: 17.6A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |