FQH8N100C ON Semiconductor / Fairchild
auf Bestellung 495 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FQH8N100C ON Semiconductor / Fairchild
Description: MOSFET N-CH 1000V 8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V.
Weitere Produktangebote FQH8N100C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQH8N100C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FQH8N100C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FQH8N100C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247 Mounting: THT Case: TO247 Kind of package: tube Power dissipation: 225W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 5A On-state resistance: 1.45Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQH8N100C | Hersteller : onsemi |
Description: MOSFET N-CH 1000V 8A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQH8N100C | Hersteller : onsemi / Fairchild | MOSFET 1000V N-Channel |
Produkt ist nicht verfügbar |
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FQH8N100C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247 Mounting: THT Case: TO247 Kind of package: tube Power dissipation: 225W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 5A On-state resistance: 1.45Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |