FQI7N80TU onsemi
Hersteller: onsemiDescription: MOSFET N-CH 800V 6.6A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 955 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.63 EUR |
| 10+ | 5.57 EUR |
| 100+ | 4.51 EUR |
| 500+ | 4.01 EUR |
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Technische Details FQI7N80TU onsemi
Description: MOSFET N-CH 800V 6.6A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V, Power Dissipation (Max): 3.13W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V.
Weitere Produktangebote FQI7N80TU nach Preis ab 5.43 EUR bis 7.25 EUR
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FQI7N80TU | Hersteller : onsemi / Fairchild |
MOSFET 800V N-Channel QFET |
auf Bestellung 2997 Stücke: Lieferzeit 14-28 Tag (e) |
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FQI7N80TU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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| FQI7N80TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI7N80TU | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 800V 6.6A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V Power Dissipation (Max): 3.13W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK (TO-262) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQI7N80TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |