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FQI8N60CTU

FQI8N60CTU onsemi

fqi8n60c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
auf Bestellung 24817 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
254+2.86 EUR
Mindestbestellmenge: 254
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Technische Details FQI8N60CTU onsemi

Description: POWER FIELD-EFFECT TRANSISTOR, 7, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Power Dissipation (Max): 3.13W (Ta), 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V.

Weitere Produktangebote FQI8N60CTU nach Preis ab 2.86 EUR bis 6.21 EUR

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FQI8N60CTU FQI8N60CTU Hersteller : Fairchild Semiconductor FAIRS46430-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
auf Bestellung 6985 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
254+2.86 EUR
Mindestbestellmenge: 254
FQI8N60CTU FQI8N60CTU Hersteller : onsemi / Fairchild FQI8N60C_D-2313833.pdf MOSFET 600V N-Channel Adv Q-FET C-Series
auf Bestellung 988 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.21 EUR
10+ 5.64 EUR
25+ 5.3 EUR
100+ 4.52 EUR
Mindestbestellmenge: 9
FQI8N60CTU FQI8N60CTU Hersteller : ON Semiconductor 505989471246409fqi8n60c-d.pdf Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Tube
Produkt ist nicht verfügbar
FQI8N60CTU FQI8N60CTU Hersteller : onsemi fqi8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar