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FQP10N20 FAIRCHILD


FQP10N20.pdf Hersteller: FAIRCHILD
TO-220AB
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Technische Details FQP10N20 FAIRCHILD

Description: MOSFET N-CH 200V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.

Weitere Produktangebote FQP10N20

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FQP10N20 FQP10N20 Hersteller : ON Semiconductor fqp10n20.pdf Trans MOSFET N-CH 200V 10A 3-Pin(3+Tab) TO-220 Rail
Produkt ist nicht verfügbar
FQP10N20 FQP10N20 Hersteller : onsemi FQP10N20.pdf Description: MOSFET N-CH 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
FQP10N20 FQP10N20 Hersteller : ON Semiconductor / Fairchild FQFQP10N20-1192313.pdf MOSFET 200V N-Channel QFET
Produkt ist nicht verfügbar