FQP13N10 ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB
Mounting: THT
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.18Ω
Power dissipation: 65W
Gate charge: 16nC
Polarisation: unipolar
Technology: QFET®
Drain current: 9.05A
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB
Mounting: THT
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.18Ω
Power dissipation: 65W
Gate charge: 16nC
Polarisation: unipolar
Technology: QFET®
Drain current: 9.05A
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.75 EUR |
32+ | 2.23 EUR |
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Technische Details FQP13N10 ONSEMI
Description: MOSFET N-CH 100V 12.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote FQP13N10 nach Preis ab 2.55 EUR bis 4.29 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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FQP13N10 | Hersteller : onsemi / Fairchild | MOSFET N-CH/100V/12.8A 0.18OHM |
auf Bestellung 10000 Stücke: Lieferzeit 702-716 Tag (e) |
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FQP13N10 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP13N10 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP13N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 12.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
Produkt ist nicht verfügbar |