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FQP17N08

FQP17N08 Fairchild Semiconductor

FAIRS13769-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2331 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
888+0.81 EUR
Mindestbestellmenge: 888
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Technische Details FQP17N08 Fairchild Semiconductor

Description: MOSFET N-CH 80V 16.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.

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FQP17N08 Hersteller : ONSEMI FAIRS13769-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FQP17N08 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)
FQP17N08 FQP17N08 Hersteller : onsemi FQP17N08.pdf Description: MOSFET N-CH 80V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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