FQP17P06 onsemi
Hersteller: onsemiDescription: MOSFET P-CH 60V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 1145 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.45 EUR |
| 50+ | 3.57 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.49 EUR |
| 1000+ | 2.11 EUR |
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Technische Details FQP17P06 onsemi
Description: MOSFET P-CH 60V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.
Weitere Produktangebote FQP17P06 nach Preis ab 2.17 EUR bis 4.5 EUR
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FQP17P06 | Hersteller : onsemi / Fairchild |
MOSFET 60V P-Channel QFET |
auf Bestellung 25912 Stücke: Lieferzeit 189-203 Tag (e) |
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FQP17P06 Produktcode: 126278 |
Transistoren > Transistoren P-Kanal-Feld |
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FQP17P06 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP17P06 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 17A 3-Pin(3+Tab) TO-220 Tube |
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FQP17P06 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FQP17P06 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |