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FQP2N40-F080

FQP2N40-F080 onsemi / Fairchild


FQP2N40_D-2313748.pdf Hersteller: onsemi / Fairchild
MOSFET N-CH 400V 1.8A 5.8OHM
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.41 EUR
17+ 3.09 EUR
100+ 2.39 EUR
500+ 1.98 EUR
Mindestbestellmenge: 16
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Technische Details FQP2N40-F080 onsemi / Fairchild

Description: MOSFET N-CH 400V 1.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V, Power Dissipation (Max): 40W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.

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FQP2N40-F080 FQP2N40-F080 Hersteller : ON Semiconductor fqp2n40-d.pdf Trans MOSFET N-CH 400V 1.8A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP2N40-F080 FQP2N40-F080 Hersteller : ONSEMI fqp2n40-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP2N40-F080 FQP2N40-F080 Hersteller : onsemi fqp2n40-d.pdf Description: MOSFET N-CH 400V 1.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V
Power Dissipation (Max): 40W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
FQP2N40-F080 FQP2N40-F080 Hersteller : ONSEMI fqp2n40-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar