FQP2N60

FQP2N60 Fairchild Semiconductor


FAIRS05663-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 2.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 84915 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
307+2.35 EUR
Mindestbestellmenge: 307
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Technische Details FQP2N60 Fairchild Semiconductor

Description: MOSFET N-CH 600V 2.4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.2A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

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FQP2N60 Hersteller : FSC FAIRS05663-1.pdf?t.download=true&u=5oefqw 09+
auf Bestellung 4618 Stücke:
Lieferzeit 21-28 Tag (e)
FQP2N60 FQP2N60 Hersteller : onsemi / Fairchild fairchild_semiconductor_fqp2n60c-1191413.pdf MOSFET
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