FQP3N60C onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
auf Bestellung 9899 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.35 EUR |
| 50+ | 2.7 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.48 EUR |
| 2000+ | 1.39 EUR |
| 5000+ | 1.32 EUR |
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Technische Details FQP3N60C onsemi
Description: MOSFET N-CH 600V 3A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.5A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V.
Weitere Produktangebote FQP3N60C nach Preis ab 2.19 EUR bis 3.77 EUR
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FQP3N60C | Hersteller : onsemi / Fairchild |
MOSFET N-CH/600V 3A/3.6OHM |
auf Bestellung 1111 Stücke: Lieferzeit 14-28 Tag (e) |
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FQP3N60C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP3N60C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 12A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 12A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP3N60C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 12A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 12A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |