auf Bestellung 30945 Stücke:
Lieferzeit 1090-1104 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 7.54 EUR |
| 10+ | 6.4 EUR |
| 50+ | 5.88 EUR |
| 100+ | 5.2 EUR |
| 250+ | 5.17 EUR |
| 500+ | 4.65 EUR |
| 1000+ | 4.21 EUR |
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Technische Details FQP47P06 onsemi / Fairchild
Description: MOSFET P-CH 60V 47A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote FQP47P06
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQP47P06 Produktcode: 166999 |
 Transistoren > Transistoren P-Kanal-Feld |
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FQP47P06 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 47A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP47P06 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 47A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP47P06 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP47P06 | Hersteller : onsemi |
Description: MOSFET P-CH 60V 47A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP47P06 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |