FQP4N20L Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 548+ | 1.35 EUR |
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Technische Details FQP4N20L Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.
Weitere Produktangebote FQP4N20L nach Preis ab 1.24 EUR bis 2.91 EUR
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Verfügbarkeit |
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auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP4N20L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 3.8A 3-Pin(3+Tab) TO-220 Tube |
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FQP4N20L | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB Mounting: THT Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 1.4Ω Pulsed drain current: 15.2A Power dissipation: 45W Gate charge: 5.2nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP4N20L | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB Mounting: THT Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 1.4Ω Pulsed drain current: 15.2A Power dissipation: 45W Gate charge: 5.2nC |
Produkt ist nicht verfügbar |