Technische Details FQP50N06LEPKE0003 Fairchild
Description: MOSFET N-CH 60V 65A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V.
Weitere Produktangebote FQP50N06LEPKE0003
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQP50N06L-EPKE0003 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 52.4A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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| FQP50N06L-EPKE0003 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 65A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
Produkt ist nicht verfügbar |