FQP6N40CF ON Semiconductor / Fairchild
auf Bestellung 986 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FQP6N40CF ON Semiconductor / Fairchild
Description: MOSFET N-CH 400V 6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V.
Weitere Produktangebote FQP6N40CF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQP6N40CF | Hersteller : FAIRCHILD |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP6N40CF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP6N40CF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.6A Pulsed drain current: 24A Power dissipation: 73W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP6N40CF | Hersteller : onsemi |
Description: MOSFET N-CH 400V 6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP6N40CF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.6A Pulsed drain current: 24A Power dissipation: 73W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |