FQP6N70
Hersteller: auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
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Technische Details FQP6N70
Description: MOSFET N-CH 700V 6.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote FQP6N70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| FQP6N70 | Hersteller : ONSEMI |
Description: ONSEMI - FQP6N70 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP6N70 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 700V 6.2A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP6N70 | Hersteller : onsemi |
Description: MOSFET N-CH 700V 6.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP6N70 | Hersteller : onsemi / Fairchild |
MOSFET 700V N-Channel QFET |
Produkt ist nicht verfügbar |